Optically Induced Phase Change for Magnetoresistance Modulation
نویسندگان
چکیده
منابع مشابه
Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application
The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the ...
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ژورنال
عنوان ژورنال: Advanced Quantum Technologies
سال: 2020
ISSN: 2511-9044,2511-9044
DOI: 10.1002/qute.201900104